THE FACT ABOUT GERMANIUM THAT NO ONE IS SUGGESTING

≤ 0.fifteen) is epitaxially grown over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, then the composition is cycled as a result of oxidizing and annealing levels. Mainly because of the preferential oxidation of Si about Ge [sixty eight], the first Si1–Crystallographic-orientation agnostic TiO2-centered MIS contacts may